FDPF7N50U_G - аналоги и даташиты транзистора

 

FDPF7N50U_G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FDPF7N50U_G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для FDPF7N50U_G

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDPF7N50U_G Datasheet (PDF)

 ..1. Size:1295K  onsemi
 fdpf7n50u fdpf7n50u g.pdf pdf_icon

FDPF7N50U_G

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and

 5.1. Size:1264K  fairchild semi
 fdpf7n50u.pdf pdf_icon

FDPF7N50U_G

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and

 6.1. Size:1019K  fairchild semi
 fdp7n50 fdpf7n50.pdf pdf_icon

FDPF7N50U_G

April 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

 6.2. Size:375K  fairchild semi
 fdpf7n50 fdpf7n50f.pdf pdf_icon

FDPF7N50U_G

March 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

ПОКАЗАТЬ ЕЩЁ

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