FDPF7N50U_G Specs and Replacement

Type Designator: FDPF7N50U_G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 12.8 nC

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220F

FDPF7N50U_G substitution

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FDPF7N50U_G datasheet

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FDPF7N50U_G

November 2013 FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC) MOSFET is tailored to reduce on-state resistance, and ... See More ⇒

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FDPF7N50U_G

November 2013 FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC) MOSFET is tailored to reduce on-state resistance, and ... See More ⇒

 6.1. Size:1019K  fairchild semi
 fdp7n50 fdpf7n50.pdf pdf_icon

FDPF7N50U_G

April 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo... See More ⇒

 6.2. Size:375K  fairchild semi
 fdpf7n50 fdpf7n50f.pdf pdf_icon

FDPF7N50U_G

March 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo... See More ⇒

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Detailed specifications: FDMT80040DC, FDN028N20, FDN304P2, FDN5632N-F085, FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D, FDPC8014AS, 13N50, FDS6898AZ-F085, FDS8449-F085, FDS86267P, FDS8949-F085, FDS8958A-F085, FDS8984-F085, FDU3N50NZTU, FDU5N50NZTU

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