FDS8958A-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS8958A-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO-8

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FDS8958A-F085 Datasheet (PDF)

..1. Size:537K onsemi
fds8958a-f085.pdf

FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1: N-ChannelThese dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10Vmode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductors advanced PowerTrench process that has been especially Q2: P-Channeltailored to m

6.1. Size:521K fairchild semi
fds8958a.pdf

April 2008tmFDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

6.2. Size:798K fairchild semi
fds8958a f085.pdf

February 2010tmFDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on

7.1. Size:1203K fairchild semi
fds8958b.pdf

November 2013FDS8958BDual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mFeatures General DescriptionThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 Aadvanced PowerTrench process th at

7.2. Size:635K onsemi
fds8958b.pdf

FDS8958BDual N & P-Channel PowerTrench MOSFETQ1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mGeneral DescriptionFeaturesThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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