FDS8958A-F085 Todos los transistores

 

FDS8958A-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS8958A-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 11.4 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO-8
 

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FDS8958A-F085 Datasheet (PDF)

 ..1. Size:537K  onsemi
 fds8958a-f085.pdf pdf_icon

FDS8958A-F085

FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1: N-ChannelThese dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10Vmode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductors advanced PowerTrench process that has been especially Q2: P-Channeltailored to m

 6.1. Size:521K  fairchild semi
 fds8958a.pdf pdf_icon

FDS8958A-F085

April 2008tmFDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

 6.2. Size:798K  fairchild semi
 fds8958a f085.pdf pdf_icon

FDS8958A-F085

February 2010tmFDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on

 7.1. Size:1203K  fairchild semi
 fds8958b.pdf pdf_icon

FDS8958A-F085

November 2013FDS8958BDual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mFeatures General DescriptionThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 Aadvanced PowerTrench process th at

MOSTRAR MÁS

Otros transistores... FDP2710-F085 , FDPC3D5N025X9D , FDPC8014AS , FDPF7N50U_G , FDS6898AZ-F085 , FDS8449-F085 , FDS86267P , FDS8949-F085 , AON7506 , FDS8984-F085 , FDU3N50NZTU , FDU5N50NZTU , FDU5N60NZTU , FDWS86068-F085 , FDWS86368-F085 , FDWS86369-F085 , FDWS86380-F085 .

History: FMI13N60E | 2N5640 | DM10N65C-2

 

 
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