FDS8958A-F085
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS8958A-F085
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11.4
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 145
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
SO-8
FDS8958A-F085
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS8958A-F085
Datasheet (PDF)
..1. Size:537K onsemi
fds8958a-f085.pdf 
FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1: N-ChannelThese dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10Vmode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductors advanced PowerTrench process that has been especially Q2: P-Channeltailored to m
6.1. Size:521K fairchild semi
fds8958a.pdf
April 2008tmFDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.
6.2. Size:798K fairchild semi
fds8958a f085.pdf
February 2010tmFDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on
7.1. Size:1203K fairchild semi
fds8958b.pdf
November 2013FDS8958BDual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mFeatures General DescriptionThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 Aadvanced PowerTrench process th at
7.2. Size:635K onsemi
fds8958b.pdf
FDS8958BDual N & P-Channel PowerTrench MOSFETQ1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mGeneral DescriptionFeaturesThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A
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