Справочник MOSFET. FDS8958A-F085

 

FDS8958A-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS8958A-F085
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11.4 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS8958A-F085

 

 

FDS8958A-F085 Datasheet (PDF)

 ..1. Size:537K  onsemi
 fds8958a-f085.pdf

FDS8958A-F085 FDS8958A-F085

FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1: N-ChannelThese dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10Vmode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductors advanced PowerTrench process that has been especially Q2: P-Channeltailored to m

 6.1. Size:521K  fairchild semi
 fds8958a.pdf

FDS8958A-F085 FDS8958A-F085

April 2008tmFDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

 6.2. Size:798K  fairchild semi
 fds8958a f085.pdf

FDS8958A-F085 FDS8958A-F085

February 2010tmFDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on

 7.1. Size:1203K  fairchild semi
 fds8958b.pdf

FDS8958A-F085 FDS8958A-F085

November 2013FDS8958BDual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mFeatures General DescriptionThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 Aadvanced PowerTrench process th at

 7.2. Size:635K  onsemi
 fds8958b.pdf

FDS8958A-F085 FDS8958A-F085

FDS8958BDual N & P-Channel PowerTrench MOSFETQ1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mGeneral DescriptionFeaturesThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A

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