FDS8958A-F085. Аналоги и основные параметры

Наименование производителя: FDS8958A-F085

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 145 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm

Тип корпуса: SO-8

Аналог (замена) для FDS8958A-F085

- подборⓘ MOSFET транзистора по параметрам

 

FDS8958A-F085 даташит

 ..1. Size:537K  onsemi
 fds8958a-f085.pdf pdf_icon

FDS8958A-F085

FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1 N-Channel These dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V mode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductor s advanced PowerTrench process that has been especially Q2 P-Channel tailored to m

 6.1. Size:521K  fairchild semi
 fds8958a.pdf pdf_icon

FDS8958A-F085

April 2008 tm FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

 6.2. Size:798K  fairchild semi
 fds8958a f085.pdf pdf_icon

FDS8958A-F085

February 2010 tm FDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on

 7.1. Size:1203K  fairchild semi
 fds8958b.pdf pdf_icon

FDS8958A-F085

November 2013 FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel 30 V, 6.4 A, 26 m Q2-P-Channel -30 V, -4.5 A, 51 m Features General Description These dual N- and P-Channel enhancement mode power field Q1 N-Channel effect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A advanced PowerTrench process th at

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