FQA9N90_F109 Todos los transistores

 

FQA9N90_F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQA9N90_F109
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO-3PN
 

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FQA9N90_F109 Datasheet (PDF)

 ..1. Size:1054K  fairchild semi
 fqa9n90 f109.pdf pdf_icon

FQA9N90_F109

April 2013FQA9N90_F109N-Channel QFET MOSFET900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 55 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF)techn

 ..2. Size:1104K  onsemi
 fqa9n90 f109.pdf pdf_icon

FQA9N90_F109

 7.1. Size:799K  fairchild semi
 fqa9n90c.pdf pdf_icon

FQA9N90_F109

July 2007 QFETFQA9N90C 900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to Fa

 7.2. Size:804K  fairchild semi
 fqa9n90c f109.pdf pdf_icon

FQA9N90_F109

July 2007 QFETFQA9N90C_F109900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FQA10N80C-F109 , FQA11N90-F109 , FQA13N50C-F109 , FQA13N80-F109 , FQA6N90C-F109 , FQA7N80C-F109 , FQA8N90C-F109 , FQA90N15-F109 , 2N60 , FQA9N90C_F109 , FQB5N60CTM_WS , FQB7P20TM_F085 , FQB8N90C , FQD3N60CTM-WS , FQD4P25TM-WS , FQD8P10TM-F085 , FQT1N80TF-WS .

History: R6046FNZC8 | IRFL110TR | HM4402B | VS3P07C | IRFP4137 | IRF250P224 | SPB07N60C2

 

 
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