FQA9N90_F109 MOSFET Datasheet: N-Ch, 900V, 8.6A. Full specification with pinout and replacement list

FQA9N90_F109 Specs and Replacement

Type Designator: FQA9N90_F109

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-3PN

FQA9N90_F109 substitution

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FQA9N90_F109 datasheet

..1. Size:1054K fairchild semi
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April 2013 FQA9N90_F109 N-Channel QFET MOSFET 900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 55 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF) techn... See More ⇒

..2. Size:1104K onsemi
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7.1. Size:799K fairchild semi
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July 2007 QFET FQA9N90C 900V N-Channel MOSFET Features Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fa... See More ⇒

7.2. Size:804K fairchild semi
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