HUFA76429D3ST-F085 Todos los transistores

 

HUFA76429D3ST-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA76429D3ST-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 134 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO-252AA
 

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HUFA76429D3ST-F085 Datasheet (PDF)

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HUFA76429D3ST-F085

HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Impedance ModelsSOURCE- ww

 1.1. Size:144K  fairchild semi
 hufa76429d3s hufa76429d3st.pdf pdf_icon

HUFA76429D3ST-F085

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 3.1. Size:229K  fairchild semi
 hufa76429d3.pdf pdf_icon

HUFA76429D3ST-F085

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 3.2. Size:638K  onsemi
 hufa76429d3.pdf pdf_icon

HUFA76429D3ST-F085

HUFA76429D3Data Sheet October 2013N-Channel Logic Level UltraFET Power MOSFET60 V, 20 A, 27 mPackagingFeaturesJEDEC TO-251AA Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 10VSOURCE- rDS(ON) = 0.027, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectriecal ModelsDRAIN - Spice and SABER Thermal Impedance Models

MOSTRAR MÁS

Otros transistores... FQB5N60CTM_WS , FQB7P20TM_F085 , FQB8N90C , FQD3N60CTM-WS , FQD4P25TM-WS , FQD8P10TM-F085 , FQT1N80TF-WS , HUF76629D3ST-F085 , IRF730 , NCV8403B , NID9N05BCL , NTB004N10G , NTB095N65S3HF , NTB110N65S3HF , NTB150N65S3HF , NTB190N65S3HF , NTBG020N120SC1 .

History: NCEP02525K | IRF7304 | IRFR110TR | TK100S04N1L | WMK80R350S | STP33N60DM2 | MSU4N60S

 

 
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