HUFA76429D3ST-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA76429D3ST-F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 134 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: TO-252AA

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HUFA76429D3ST-F085 datasheet

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HUFA76429D3ST-F085

HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features Ultra Low On-Resistance JEDEC TO-252AA - rDS(ON) = 0.023 , VGS = 10V - rDS(ON) = 0.027 , VGS = 5V DRAIN (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models GATE - Spice and SABER Thermal Impedance Models SOURCE - ww

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HUFA76429D3ST-F085

HUFA76429D3, HUFA76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

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HUFA76429D3ST-F085

HUFA76429D3, HUFA76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 3.2. Size:638K  onsemi
 hufa76429d3.pdf pdf_icon

HUFA76429D3ST-F085

HUFA76429D3 Data Sheet October 2013 N-Channel Logic Level UltraFET Power MOSFET 60 V, 20 A, 27 m Packaging Features JEDEC TO-251AA Ultra Low On-Resistance - rDS(ON) = 0.023 , VGS = 10V SOURCE - rDS(ON) = 0.027 , VGS = 5V DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models DRAIN - Spice and SABER Thermal Impedance Models

MOSTRAR MÁS

Otros transistores... FQB5N60CTM_WS, FQB7P20TM_F085, FQB8N90C, FQD3N60CTM-WS, FQD4P25TM-WS, FQD8P10TM-F085, FQT1N80TF-WS, HUF76629D3ST-F085, IRFB31N20D, NCV8403B, NID9N05BCL, NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1