HUFA76429D3ST-F085 Specs and Replacement

Type Designator: HUFA76429D3ST-F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 134 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-252AA

HUFA76429D3ST-F085 substitution

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HUFA76429D3ST-F085 datasheet

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HUFA76429D3ST-F085

HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features Ultra Low On-Resistance JEDEC TO-252AA - rDS(ON) = 0.023 , VGS = 10V - rDS(ON) = 0.027 , VGS = 5V DRAIN (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models GATE - Spice and SABER Thermal Impedance Models SOURCE - ww... See More ⇒

 1.1. Size:144K  fairchild semi
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HUFA76429D3ST-F085

HUFA76429D3, HUFA76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El... See More ⇒

 3.1. Size:229K  fairchild semi
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HUFA76429D3ST-F085

HUFA76429D3, HUFA76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El... See More ⇒

 3.2. Size:638K  onsemi
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HUFA76429D3ST-F085

HUFA76429D3 Data Sheet October 2013 N-Channel Logic Level UltraFET Power MOSFET 60 V, 20 A, 27 m Packaging Features JEDEC TO-251AA Ultra Low On-Resistance - rDS(ON) = 0.023 , VGS = 10V SOURCE - rDS(ON) = 0.027 , VGS = 5V DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models DRAIN - Spice and SABER Thermal Impedance Models ... See More ⇒

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Detailed specifications: FQB5N60CTM_WS, FQB7P20TM_F085, FQB8N90C, FQD3N60CTM-WS, FQD4P25TM-WS, FQD8P10TM-F085, FQT1N80TF-WS, HUF76629D3ST-F085, IRFB31N20D, NCV8403B, NID9N05BCL, NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.