NTHD4P02F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTHD4P02F

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm

Encapsulados: CHIPFET

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NTHD4P02F datasheet

 ..1. Size:83K  onsemi
nthd4p02f nthd4p02ft1g.pdf pdf_icon

NTHD4P02F

NTHD4P02F Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Similar Thermal V(BR)DSS RDS(on) TYP ID MAX Characteristics -130 mW @ -4.5 V Independent Pinout to each Device to Ease Circu

 ..2. Size:83K  onsemi
nthd4p02f.pdf pdf_icon

NTHD4P02F

NTHD4P02F Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Similar Thermal V(BR)DSS RDS(on) TYP ID MAX Characteristics -130 mW @ -4.5 V Independent Pinout to each Device to Ease Circu

 9.1. Size:72K  onsemi
nthd4n02f-d nthd4n02ft1.pdf pdf_icon

NTHD4P02F

NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N-Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Better Thermals V(BR)DSS RDS(on) TYP ID MAX Super Low Gate Charge MOSFET 60 mW @ 4.5 V Ultra Low VF Schottky 20 V 3.9 A 80 mW @

 9.2. Size:74K  onsemi
nthd4401p-d.pdf pdf_icon

NTHD4P02F

NTHD4401P Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFETt Features Low RDS(on) and Fast Switching Speed in a ChipFET Package http //onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where Heat Transfer is Required V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available 130 mW @ -4.5 V -20 V

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