NTHD4P02F Specs and Replacement
Type Designator: NTHD4P02F
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: CHIPFET
NTHD4P02F substitution
- MOSFET ⓘ Cross-Reference Search
NTHD4P02F datasheet
nthd4p02f nthd4p02ft1g.pdf
NTHD4P02F Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Similar Thermal V(BR)DSS RDS(on) TYP ID MAX Characteristics -130 mW @ -4.5 V Independent Pinout to each Device to Ease Circu... See More ⇒
nthd4p02f.pdf
NTHD4P02F Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Similar Thermal V(BR)DSS RDS(on) TYP ID MAX Characteristics -130 mW @ -4.5 V Independent Pinout to each Device to Ease Circu... See More ⇒
nthd4n02f-d nthd4n02ft1.pdf
NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N-Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Better Thermals V(BR)DSS RDS(on) TYP ID MAX Super Low Gate Charge MOSFET 60 mW @ 4.5 V Ultra Low VF Schottky 20 V 3.9 A 80 mW @... See More ⇒
nthd4401p-d.pdf
NTHD4401P Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFETt Features Low RDS(on) and Fast Switching Speed in a ChipFET Package http //onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where Heat Transfer is Required V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available 130 mW @ -4.5 V -20 V... See More ⇒
Detailed specifications: NTDV18N06L, NTH027N65S3F, NTH4L020N120SC1, NTH4L027N65S3F, NTH4L040N120SC1, NTH4L040N65S3F, NTH4L080N120SC1, NTH4L160N120SC1, IRFB4110, NTHL020N090SC1, NTHL020N120SC1, NTHL027N65S3HF, NTHL033N65S3HF, NTHL040N120SC1, NTHL040N65S3HF, NTHL050N65S3HF, NTHL060N090SC1
Keywords - NTHD4P02F MOSFET specs
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