NTMFD5C446NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFD5C446NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 145 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16.8 nS
Cossⓘ - Capacitancia de salida: 1270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00265 Ohm
Paquete / Cubierta: DFN8-5X6
Búsqueda de reemplazo de MOSFET NTMFD5C446NL
NTMFD5C446NL Datasheet (PDF)
ntmfd5c446nl.pdf
NTMFD5C446NLMOSFET Power, Dual,N-Channel40 V, 2.65 mW, 145 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.65 mW @ 10 V40 VCompliant145 A3.9 mW @ 4.5
ntmfd5c470nlt1g.pdf
NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V
ntmfd5c466nlt1g.pdf
NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V
ntmfd5c466nt1g.pdf
NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value
ntmfd5c466n.pdf
NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value
ntmfd5c466nl.pdf
NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V
ntmfd5c470nl.pdf
NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918