NTMFD5C446NL MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFD5C446NL
Marking Code: 5C446L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 145 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 16.8 nS
Cossⓘ - Output Capacitance: 1270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
Package: DFN8-5X6
NTMFD5C446NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFD5C446NL Datasheet (PDF)
ntmfd5c446nl.pdf
NTMFD5C446NLMOSFET Power, Dual,N-Channel40 V, 2.65 mW, 145 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.65 mW @ 10 V40 VCompliant145 A3.9 mW @ 4.5
ntmfd5c470nlt1g.pdf
NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V
ntmfd5c466nlt1g.pdf
NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V
ntmfd5c466nt1g.pdf
NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value
ntmfd5c466n.pdf
NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value
ntmfd5c466nl.pdf
NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V
ntmfd5c470nl.pdf
NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BLF6G38-100
History: BLF6G38-100
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