NTMFD5C446NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFD5C446NL
Маркировка: 5C446L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 145 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 54 nC
trⓘ - Время нарастания: 16.8 ns
Cossⓘ - Выходная емкость: 1270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00265 Ohm
Тип корпуса: DFN8-5X6
Аналог (замена) для NTMFD5C446NL
NTMFD5C446NL Datasheet (PDF)
ntmfd5c446nl.pdf
NTMFD5C446NLMOSFET Power, Dual,N-Channel40 V, 2.65 mW, 145 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.65 mW @ 10 V40 VCompliant145 A3.9 mW @ 4.5
ntmfd5c470nlt1g.pdf
NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V
ntmfd5c466nlt1g.pdf
NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V
ntmfd5c466nt1g.pdf
NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value
ntmfd5c466n.pdf
NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value
ntmfd5c466nl.pdf
NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V
ntmfd5c470nl.pdf
NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918