NTMFD6H852NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFD6H852NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 69 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0255 Ohm

Encapsulados: DFN8-5X6

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NTMFD6H852NL datasheet

 ..1. Size:127K  onsemi
 ntmfd6h852nl.pdf pdf_icon

NTMFD6H852NL

NTMFD6H852NL Power MOSFET 80 V, 25.5 mW, 25 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 25.5 mW @ 10 V Para

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 ntmfd6h840nlt1g.pdf pdf_icon

NTMFD6H852NL

NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame

 6.2. Size:202K  1
 ntmfd6h846nlt1g.pdf pdf_icon

NTMFD6H852NL

MOSFET - Power, Dual N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @ 10 V 80 V 31 A MAXIMUM RATINGS (TJ = 25 C unless otherwise n

 6.3. Size:126K  onsemi
 ntmfd6h840nl.pdf pdf_icon

NTMFD6H852NL

NTMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.9 mW @ 10 V Parame

MOSTRAR MÁS

Otros transistores... NTMFD5C466N, NTMFD5C466NL, NTMFD5C470NL, NTMFD5C650NL, NTMFD5C674NL, NTMFD5C680NL, NTMFD6H840NL, NTMFD6H846NL, AON7506, NTMFS015N10MCL, NTMFS016N06C, NTMFS020N06C, NTMFS024N06C, NTMFS08N003C, NTMFS0D55N03CG, NTMFS0D8N02P1E, NTMFS0D9N03CG