NTMFD6H852NL MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTMFD6H852NL
   Marking Code: 6H852L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0255 Ohm
   Package: DFN8-5X6

NTMFD6H852NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NTMFD6H852NL Datasheet (PDF)

..1. Size:127K onsemi
ntmfd6h852nl.pdf

NTMFD6H852NLPower MOSFET80 V, 25.5 mW, 25 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)25.5 mW @ 10 VPara

6.1. Size:126K 1
ntmfd6h840nlt1g.pdf

NTMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.9 mW @ 10 VParame

6.2. Size:202K 1
ntmfd6h846nlt1g.pdf

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANTMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @ 10 V80 V31 AMAXIMUM RATINGS (TJ = 25C unless otherwise n

6.3. Size:126K onsemi
ntmfd6h840nl.pdf