NTMFS0D9N03CG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS0D9N03CG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 144 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 298 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 4306 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0009 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de NTMFS0D9N03CG MOSFET
NTMFS0D9N03CG Datasheet (PDF)
ntmfs0d9n03cg.pdf

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
ntmfs0d9n03cgt1g.pdf

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
ntmfs0d8n02p1et1g.pdf

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
ntmfs0d8n02p1e.pdf

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
Otros transistores... NTMFD6H852NL , NTMFS015N10MCL , NTMFS016N06C , NTMFS020N06C , NTMFS024N06C , NTMFS08N003C , NTMFS0D55N03CG , NTMFS0D8N02P1E , P0903BDG , NTMFS1D15N03CG , NTMFS23D9N06HL , NTMFS3D6N10MCL , NTMFS4833NA , NTMFS4837NH , NTMFS4845N , NTMFS4897NF , NTMFS4899NF .
History: BSL207SP | LSB55R050GT | S85N042RP | HM10P10D | FDU6688 | UPA1950
History: BSL207SP | LSB55R050GT | S85N042RP | HM10P10D | FDU6688 | UPA1950



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