All MOSFET. NTMFS0D9N03CG Datasheet

 

NTMFS0D9N03CG Datasheet and Replacement


   Type Designator: NTMFS0D9N03CG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 298 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 4306 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
   Package: SO-8FL
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NTMFS0D9N03CG Datasheet (PDF)

 ..1. Size:176K  onsemi
 ntmfs0d9n03cg.pdf pdf_icon

NTMFS0D9N03CG

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (

 0.1. Size:176K  1
 ntmfs0d9n03cgt1g.pdf pdf_icon

NTMFS0D9N03CG

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (

 7.1. Size:187K  1
 ntmfs0d8n02p1et1g.pdf pdf_icon

NTMFS0D9N03CG

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic

 7.2. Size:187K  onsemi
 ntmfs0d8n02p1e.pdf pdf_icon

NTMFS0D9N03CG

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic

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History: MCH3484 | DMN30H4D0L

Keywords - NTMFS0D9N03CG MOSFET datasheet

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