NTMFS0D9N03CG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS0D9N03CG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 144 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 298 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 4306 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0009 Ohm
Тип корпуса: SO-8FL
NTMFS0D9N03CG Datasheet (PDF)
ntmfs0d9n03cg.pdf

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
ntmfs0d9n03cgt1g.pdf

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
ntmfs0d8n02p1et1g.pdf

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
ntmfs0d8n02p1e.pdf

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: CS5N70U | SI7212DN | RJK0355DSP | HM2P10PR
History: CS5N70U | SI7212DN | RJK0355DSP | HM2P10PR



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