NTMFS5C430N Todos los transistores

 

NTMFS5C430N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C430N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 185 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
   Paquete / Cubierta: DFN5
 

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NTMFS5C430N Datasheet (PDF)

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NTMFS5C430N

NTMFS5C430NPower MOSFET40 V, 1.7 mW, 185 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Va

 0.1. Size:77K  1
 ntmfs5c430nlt1g.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NLPower MOSFET40 V, 1.4 mW, 200 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.4 mW @ 10 V40

 0.2. Size:174K  1
 ntmfs5c430nlt3g.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =

 0.3. Size:174K  onsemi
 ntmfs5c430nl.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =

MOSTRAR MÁS

Otros transistores... NTMFS4C59N , NTMFS4H013NF , NTMFS5113PL , NTMFS5C404N , NTMFS5C406N , NTMFS5C406NL , NTMFS5C410N , NTMFS5C426N , RU7088R , NTMFS5C430NL , NTMFS5C442N , NTMFS5C450N , NTMFS5C450NL , NTMFS5C456NL , NTMFS5C460NL , NTMFS5C468NL , NTMFS5C609NL .

History: IPB011N04LG

 

 
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