NTMFS5C430N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5C430N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 106 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 185 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 1600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm

Encapsulados: DFN5

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NTMFS5C430N datasheet

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 ntmfs5c430n.pdf pdf_icon

NTMFS5C430N

NTMFS5C430N Power MOSFET 40 V, 1.7 mW, 185 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Va

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NTMFS5C430N

NTMFS5C430NL Power MOSFET 40 V, 1.4 mW, 200 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.4 mW @ 10 V 40

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 ntmfs5c430nlt3g.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NL MOSFET Power, Single, N-Channel 40 V, 1.4 mW, 200 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 200 A 2.2 mW @ 4.5 V MAXIMUM RATINGS (TJ =

 0.3. Size:174K  onsemi
 ntmfs5c430nl.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NL MOSFET Power, Single, N-Channel 40 V, 1.4 mW, 200 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 200 A 2.2 mW @ 4.5 V MAXIMUM RATINGS (TJ =

MOSTRAR MÁS

Otros transistores... NTMFS4C59N, NTMFS4H013NF, NTMFS5113PL, NTMFS5C404N, NTMFS5C406N, NTMFS5C406NL, NTMFS5C410N, NTMFS5C426N, RU7088R, NTMFS5C430NL, NTMFS5C442N, NTMFS5C450N, NTMFS5C450NL, NTMFS5C456NL, NTMFS5C460NL, NTMFS5C468NL, NTMFS5C609NL