NTMFS5C430N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C430N
Código: 5C430N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 185 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 47 nC
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 1600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS5C430N
NTMFS5C430N Datasheet (PDF)
ntmfs5c430n.pdf
NTMFS5C430NPower MOSFET40 V, 1.7 mW, 185 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Va
ntmfs5c430nlt1g.pdf
NTMFS5C430NLPower MOSFET40 V, 1.4 mW, 200 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.4 mW @ 10 V40
ntmfs5c430nlt3g.pdf
NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =
ntmfs5c430nl.pdf
NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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