All MOSFET. NTMFS5C430N Datasheet

 

NTMFS5C430N Datasheet and Replacement


   Type Designator: NTMFS5C430N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 185 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: DFN5
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NTMFS5C430N Datasheet (PDF)

 ..1. Size:117K  onsemi
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NTMFS5C430N

NTMFS5C430NPower MOSFET40 V, 1.7 mW, 185 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Va

 0.1. Size:77K  1
ntmfs5c430nlt1g.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NLPower MOSFET40 V, 1.4 mW, 200 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.4 mW @ 10 V40

 0.2. Size:174K  1
ntmfs5c430nlt3g.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =

 0.3. Size:174K  onsemi
ntmfs5c430nl.pdf pdf_icon

NTMFS5C430N

NTMFS5C430NLMOSFET Power, Single,N-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V200 A2.2 mW @ 4.5 VMAXIMUM RATINGS (TJ =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - NTMFS5C430N MOSFET datasheet

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