NTMFS5H409NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5H409NL
Código: 5H409L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 140 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 270 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 89 nC
Tiempo de subida (tr): 130 nS
Conductancia de drenaje-sustrato (Cd): 1400 pF
Resistencia entre drenaje y fuente RDS(on): 0.0011 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS5H409NL
NTMFS5H409NL Datasheet (PDF)
ntmfs5h409nl.pdf
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ntmfs5h425nl.pdf
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ntmfs5h431nl.pdf
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ntmfs5h414nl.pdf
NTMFS5H414NLMOSFET Single,N-Channel40 V, 1.4 mW, 210 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V210 AMAXIMUM RATINGS (TJ = 25C unless otherwise
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