All MOSFET. NTMFS5H409NL Datasheet

 

NTMFS5H409NL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS5H409NL
   Marking Code: 5H409L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 270 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 89 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: DFN5

 NTMFS5H409NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS5H409NL Datasheet (PDF)

 ..1. Size:182K  onsemi
 ntmfs5h409nl.pdf

NTMFS5H409NL NTMFS5H409NL

NTMFS5H409NLMOSFET Power, Single,N-Channel40 V, 1.1 mW, 270 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.1 mW @ 10 V40 V270 AMAXIMUM RATINGS (TJ = 25C unless ot

 5.1. Size:174K  onsemi
 ntmfs5h400nl.pdf

NTMFS5H409NL NTMFS5H409NL

NTMFS5H400NLMOSFET Power, Single,N-Channel40 V, 0.80 mW, 330 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.80 mW @ 10 V40 V330 AMAXIMUM RATINGS (TJ = 25C unless

 6.1. Size:171K  1
 ntmfs5h425nlt1g.pdf

NTMFS5H409NL NTMFS5H409NL

NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise

 6.2. Size:171K  onsemi
 ntmfs5h425nl.pdf

NTMFS5H409NL NTMFS5H409NL

NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise

 6.3. Size:171K  onsemi
 ntmfs5h419nl.pdf

NTMFS5H409NL NTMFS5H409NL

NTMFS5H419NLMOSFET Power, Single,N-Channel40 V, 2.1 mW, 155 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.1 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise

 6.4. Size:171K  onsemi
 ntmfs5h431nl.pdf

NTMFS5H409NL NTMFS5H409NL

NTMFS5H431NLMOSFET Power, Single,N-Channel40 V, 3.3 mW, 106 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX3.3 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise

 6.5. Size:175K  onsemi
 ntmfs5h414nl.pdf

NTMFS5H409NL NTMFS5H409NL

NTMFS5H414NLMOSFET Single,N-Channel40 V, 1.4 mW, 210 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.4 mW @ 10 V40 V210 AMAXIMUM RATINGS (TJ = 25C unless otherwise

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK6246-75C

 

 
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