Справочник MOSFET. NTMFS5H409NL

 

NTMFS5H409NL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFS5H409NL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 270 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 130 ns
   Cossⓘ - Выходная емкость: 1400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0011 Ohm
   Тип корпуса: DFN5
     - подбор MOSFET транзистора по параметрам

 

NTMFS5H409NL Datasheet (PDF)

 ..1. Size:182K  onsemi
ntmfs5h409nl.pdfpdf_icon

NTMFS5H409NL

NTMFS5H409NLMOSFET Power, Single,N-Channel40 V, 1.1 mW, 270 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.1 mW @ 10 V40 V270 AMAXIMUM RATINGS (TJ = 25C unless ot

 5.1. Size:174K  onsemi
ntmfs5h400nl.pdfpdf_icon

NTMFS5H409NL

NTMFS5H400NLMOSFET Power, Single,N-Channel40 V, 0.80 mW, 330 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.80 mW @ 10 V40 V330 AMAXIMUM RATINGS (TJ = 25C unless

 6.1. Size:171K  1
ntmfs5h425nlt1g.pdfpdf_icon

NTMFS5H409NL

NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise

 6.2. Size:171K  onsemi
ntmfs5h425nl.pdfpdf_icon

NTMFS5H409NL

NTMFS5H425NLMOSFET Power, Single,N-Channel40 V, 2.8 mW, 118 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX2.8 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRF241 | NCE70T180D

 

 
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