NTMTS001N06CL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMTS001N06CL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 244 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 398.2 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25.2 nS

Cossⓘ - Capacitancia de salida: 6225 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00081 Ohm

Encapsulados: POWER88

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NTMTS001N06CL datasheet

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 ntmts001n06cl.pdf pdf_icon

NTMTS001N06CL

NTMTS001N06CL Power MOSFET 60 V, 0.81 mW, 398.2 A, Single N-Channel Features Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses Power 88 Package, Industry Standard These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.

 8.1. Size:399K  onsemi
 ntmts0d7n06c.pdf pdf_icon

NTMTS001N06CL

MOSFET - Power, Single N-Channel, DFNW8 60 V, 0.72 mW, 464 A NTMTS0D7N06C Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 0.72 mW @ 10 V 464 A Typical A

 8.2. Size:241K  onsemi
 ntmts0d6n04c.pdf pdf_icon

NTMTS001N06CL

NTMTS0D6N04C Power MOSFET 40 V, 0.48 mW, 533 A, Single N-Channel Features Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 40 V 0.48 mW @ 10 V 533

 8.3. Size:398K  onsemi
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NTMTS001N06CL

MOSFET - Power, Single N-Channel 60 V, 0.68 mW, 477 A NTMTS0D7N06CL Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard 0.68 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are Ro

MOSTRAR MÁS

Otros transistores... NTMFS6H818N, NTMFS6H818NL, NTMFS6H836N, NTMFS6H836NL, NTMFS6H848NL, NTMFS6H852NL, NTMFS6H864NL, NTMFSC0D9N04CL, IRF9540N, NTMTS0D6N04C, NTMTS0D6N04CL, NTMTS0D7N06C, NTMTS0D7N06CL, NTMYS1D2N04CL, NTMYS4D1N06CL, NTND31225CZ, NTNS1K5N021Z