NTMTS001N06CL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMTS001N06CL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 244 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 398.2 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25.2 nS
Cossⓘ - Capacitancia de salida: 6225 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00081 Ohm
Paquete / Cubierta: POWER88
Búsqueda de reemplazo de MOSFET NTMTS001N06CL
NTMTS001N06CL Datasheet (PDF)
ntmts001n06cl.pdf
NTMTS001N06CLPower MOSFET60 V, 0.81 mW, 398.2 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Power 88 Package, Industry Standard These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.
ntmts0d7n06c.pdf
MOSFET - Power, SingleN-Channel, DFNW860 V, 0.72 mW, 464 ANTMTS0D7N06CFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 0.72 mW @ 10 V 464 ATypical A
ntmts0d6n04c.pdf
NTMTS0D6N04CPower MOSFET40 V, 0.48 mW, 533 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications40 V 0.48 mW @ 10 V 533
ntmts0d7n06cl.pdf
MOSFET - Power, SingleN-Channel60 V, 0.68 mW, 477 ANTMTS0D7N06CLFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.68 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are Ro
ntmts0d6n04cl.pdf
NTMTS0D6N04CLPower MOSFET40 V, 0.42 mW, 554.5 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications0.42 mW @ 10 V40 V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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