NTMTS001N06CL MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMTS001N06CL
Marking Code: 001N06CL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 244 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 398.2 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 165 nC
trⓘ - Rise Time: 25.2 nS
Cossⓘ - Output Capacitance: 6225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00081 Ohm
Package: POWER88
NTMTS001N06CL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMTS001N06CL Datasheet (PDF)
ntmts001n06cl.pdf
NTMTS001N06CLPower MOSFET60 V, 0.81 mW, 398.2 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Power 88 Package, Industry Standard These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.
ntmts0d7n06c.pdf
MOSFET - Power, SingleN-Channel, DFNW860 V, 0.72 mW, 464 ANTMTS0D7N06CFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 0.72 mW @ 10 V 464 ATypical A
ntmts0d6n04c.pdf
NTMTS0D6N04CPower MOSFET40 V, 0.48 mW, 533 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications40 V 0.48 mW @ 10 V 533
ntmts0d7n06cl.pdf
MOSFET - Power, SingleN-Channel60 V, 0.68 mW, 477 ANTMTS0D7N06CLFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.68 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are Ro
ntmts0d6n04cl.pdf
NTMTS0D6N04CLPower MOSFET40 V, 0.42 mW, 554.5 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications0.42 mW @ 10 V40 V
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History: SRC65R032FB | BUK6507-55C | TSA20N65MR | IXTA60N20T
History: SRC65R032FB | BUK6507-55C | TSA20N65MR | IXTA60N20T
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