NTTFS002N04C Todos los transistores

 

NTTFS002N04C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTTFS002N04C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 136 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 1230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: WDFN8
 

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NTTFS002N04C Datasheet (PDF)

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NTTFS002N04C

NTTFS002N04CMOSFET Power, Single,N-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 2.4 mW @ 10 V 136 AMAXIMUM RATINGS (TJ = 25C unless other

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NTTFS002N04C

NTTFS002N04CLMOSFET Power, Single,N-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant2.2 mW @ 10 V40 V 142 AMAXIMUM RATINGS (TJ = 25C unless oth

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NTTFS002N04C

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis

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NTTFS002N04C

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val

Otros transistores... NTP5862N , NTP5D0N15MC , NTPF110N65S3HF , NTPF150N65S3HF , NTPF190N65S3HF , NTPF360N80S3Z , NTR3A052PZ , NTR3C21NZ , P60NF06 , NTTFS002N04CL , NTTFS003N04C , NTTFS004N04C , NTTFS005N04C , NTTFS008N04C , NTTFS010N10MCL , NTTFS015N04C , NTTFS015P03P8Z .

 

 
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