NTTFS002N04C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS002N04C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 136 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 77 nS
Cossⓘ - Capacitancia de salida: 1230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Paquete / Cubierta: WDFN8
- Selección de transistores por parámetros
NTTFS002N04C Datasheet (PDF)
nttfs002n04c.pdf

NTTFS002N04CMOSFET Power, Single,N-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 2.4 mW @ 10 V 136 AMAXIMUM RATINGS (TJ = 25C unless other
nttfs002n04cl.pdf

NTTFS002N04CLMOSFET Power, Single,N-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant2.2 mW @ 10 V40 V 142 AMAXIMUM RATINGS (TJ = 25C unless oth
nttfs004n04c.pdf

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis
nttfs005n04c.pdf

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 2SK3471 | 2SK1152L | NTD32N06LG | AP6904GH-HF | AUIRFN8401 | IRHMK57260SE | NTHS2101PT1G
History: 2SK3471 | 2SK1152L | NTD32N06LG | AP6904GH-HF | AUIRFN8401 | IRHMK57260SE | NTHS2101PT1G



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