NTTFS002N04C Specs and Replacement

Type Designator: NTTFS002N04C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 136 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 1230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: WDFN8

NTTFS002N04C substitution

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NTTFS002N04C datasheet

 ..1. Size:272K  onsemi
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NTTFS002N04C

NTTFS002N04C MOSFET Power, Single, N-Channel 40 V, 2.4 mW, 136 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 2.4 mW @ 10 V 136 A MAXIMUM RATINGS (TJ = 25 C unless other... See More ⇒

 0.1. Size:355K  onsemi
nttfs002n04cl.pdf pdf_icon

NTTFS002N04C

NTTFS002N04CL MOSFET Power, Single, N-Channel 40 V, 2.2 mW, 142 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 2.2 mW @ 10 V 40 V 142 A MAXIMUM RATINGS (TJ = 25 C unless oth... See More ⇒

 7.1. Size:205K  onsemi
nttfs004n04c.pdf pdf_icon

NTTFS002N04C

NTTFS004N04C MOSFET Power, Single, N-Channel 40 V, 4.9 mW, 77 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 4.9 mW @ 10 V 77 A MAXIMUM RATINGS (TJ = 25 C unless otherwis... See More ⇒

 7.2. Size:193K  onsemi
nttfs005n04c.pdf pdf_icon

NTTFS002N04C

NTTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Val... See More ⇒

Detailed specifications: NTP5862N, NTP5D0N15MC, NTPF110N65S3HF, NTPF150N65S3HF, NTPF190N65S3HF, NTPF360N80S3Z, NTR3A052PZ, NTR3C21NZ, AO4407, NTTFS002N04CL, NTTFS003N04C, NTTFS004N04C, NTTFS005N04C, NTTFS008N04C, NTTFS010N10MCL, NTTFS015N04C, NTTFS015P03P8Z

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