NTTFS002N04C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTTFS002N04C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 136 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 77 ns
Cossⓘ - Выходная емкость: 1230 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NTTFS002N04C
NTTFS002N04C Datasheet (PDF)
nttfs002n04c.pdf

NTTFS002N04CMOSFET Power, Single,N-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 2.4 mW @ 10 V 136 AMAXIMUM RATINGS (TJ = 25C unless other
nttfs002n04cl.pdf

NTTFS002N04CLMOSFET Power, Single,N-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant2.2 mW @ 10 V40 V 142 AMAXIMUM RATINGS (TJ = 25C unless oth
nttfs004n04c.pdf

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis
nttfs005n04c.pdf

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val
Другие MOSFET... NTP5862N , NTP5D0N15MC , NTPF110N65S3HF , NTPF150N65S3HF , NTPF190N65S3HF , NTPF360N80S3Z , NTR3A052PZ , NTR3C21NZ , P60NF06 , NTTFS002N04CL , NTTFS003N04C , NTTFS004N04C , NTTFS005N04C , NTTFS008N04C , NTTFS010N10MCL , NTTFS015N04C , NTTFS015P03P8Z .
History: 2SK4100LS | NCE2321 | IRLZ44S | NCEP058N85M | SJMN380R70B | MTE65N20H8
History: 2SK4100LS | NCE2321 | IRLZ44S | NCEP058N85M | SJMN380R70B | MTE65N20H8



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