NTTFS010N10MCL Datasheet. Equivalente

 ..1. Size:387K  onsemi
 nttfs010n10mcl.pdf

NTTFS010N10MCL MOSFET, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 50 A, 10.6 mW www.onsemi.com General Description This N-Channel POWETRENCH MOSFET is produced using ELECTRICAL CONNECTION ON Semiconductor s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been S D optimized to minimize on-state resistance and yet maintain superior

 7.1. Size:201K  onsemi
 nttfs015p03p8z.pdf

NTTFS015P03P8Z MOSFET Power, Single, P-Channel, m8FL -30 V, 7.5 mW Features www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.5 mW @ -10 V Compliant -30 V -47.6 A 12 mW @ -4.5 V

 7.2. Size:139K  onsemi
 nttfs016n06c.pdf

MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NTTFS016N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 16.3 mW @ 10 V 32 A Typica

 7.3. Size:199K  onsemi
 nttfs015n04c.pdf

NTTFS015N04C MOSFET Power, Single, N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 17.3 mW @ 10 V 27 A MAXIMUM RATINGS (TJ = 25 C unless otherw