NTTFS010N10MCL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTTFS010N10MCL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 52 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3 ns
Cossⓘ - Выходная емкость: 625 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0106 Ohm
Тип корпуса: WDFN8
- подбор MOSFET транзистора по параметрам
NTTFS010N10MCL Datasheet (PDF)
nttfs010n10mcl.pdf

NTTFS010N10MCLMOSFET, N-Channel,Shielded Gate,POWERTRENCH)100 V, 50 A, 10.6 mWwww.onsemi.comGeneral DescriptionThis N-Channel POWETRENCH MOSFET is produced usingELECTRICAL CONNECTIONON Semiconductors advanced POWERTRENCH process thatincorporates Shielded Gate technology. This process has beenSDoptimized to minimize on-state resistance and yet maintain superior
nttfs015p03p8z.pdf

NTTFS015P03P8ZMOSFET Power, Single,P-Channel, m8FL-30 V, 7.5 mW Featureswww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving andExcellent Thermal ConductionV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 mW @ -10 VCompliant-30 V -47.6 A12 mW @ -4.5 V
nttfs016n06c.pdf

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANTTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 16.3 mW @ 10 V 32 ATypica
nttfs015n04c.pdf

NTTFS015N04CMOSFET Power, Single,N-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 17.3 mW @ 10 V 27 AMAXIMUM RATINGS (TJ = 25C unless otherw
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME2308D-G | AP2306CGN-HF | ST2341A | KF4N65FM | APM9424K | AP14S50S-HF | LSGH04R029
History: ME2308D-G | AP2306CGN-HF | ST2341A | KF4N65FM | APM9424K | AP14S50S-HF | LSGH04R029



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