All MOSFET. NTTFS010N10MCL Datasheet

 

NTTFS010N10MCL Datasheet and Replacement


   Type Designator: NTTFS010N10MCL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0106 Ohm
   Package: WDFN8
 

 NTTFS010N10MCL substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTTFS010N10MCL Datasheet (PDF)

 ..1. Size:387K  onsemi
nttfs010n10mcl.pdf pdf_icon

NTTFS010N10MCL

NTTFS010N10MCLMOSFET, N-Channel,Shielded Gate,POWERTRENCH)100 V, 50 A, 10.6 mWwww.onsemi.comGeneral DescriptionThis N-Channel POWETRENCH MOSFET is produced usingELECTRICAL CONNECTIONON Semiconductors advanced POWERTRENCH process thatincorporates Shielded Gate technology. This process has beenSDoptimized to minimize on-state resistance and yet maintain superior

 7.1. Size:201K  onsemi
nttfs015p03p8z.pdf pdf_icon

NTTFS010N10MCL

NTTFS015P03P8ZMOSFET Power, Single,P-Channel, m8FL-30 V, 7.5 mW Featureswww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving andExcellent Thermal ConductionV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 mW @ -10 VCompliant-30 V -47.6 A12 mW @ -4.5 V

 7.2. Size:139K  onsemi
nttfs016n06c.pdf pdf_icon

NTTFS010N10MCL

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANTTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 16.3 mW @ 10 V 32 ATypica

 7.3. Size:199K  onsemi
nttfs015n04c.pdf pdf_icon

NTTFS010N10MCL

NTTFS015N04CMOSFET Power, Single,N-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 17.3 mW @ 10 V 27 AMAXIMUM RATINGS (TJ = 25C unless otherw

Datasheet: NTR3A052PZ , NTR3C21NZ , NTTFS002N04C , NTTFS002N04CL , NTTFS003N04C , NTTFS004N04C , NTTFS005N04C , NTTFS008N04C , STP80NF70 , NTTFS015N04C , NTTFS015P03P8Z , NTTFS016N06C , NTTFS020N06C , NTTFS024N06C , NTTFS030N06C , NTTFS1D2N02P1E , NTTFS2D8N04HL .

Keywords - NTTFS010N10MCL MOSFET datasheet

 NTTFS010N10MCL cross reference
 NTTFS010N10MCL equivalent finder
 NTTFS010N10MCL lookup
 NTTFS010N10MCL substitution
 NTTFS010N10MCL replacement

 

 
Back to Top

 


 
.