NVATS4A103PZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVATS4A103PZ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 400 nS

Cossⓘ - Capacitancia de salida: 555 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: ATPAK

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NVATS4A103PZ datasheet

 ..1. Size:427K  onsemi
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NVATS4A103PZ

NVATS4A103PZ Power MOSFET 30 V, 13 m , 60 A, P-Channel The NVATS4A103PZ is a power MOSFET designed for compact size and www.onsemi.com high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features 13 m @ 10 V Low On-Resistance 30 V 60A

 9.1. Size:941K  onsemi
nvats5a114plz.pdf pdf_icon

NVATS4A103PZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m , 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 16 m @ 10 V High Current Capability 60 V

 9.2. Size:805K  onsemi
nvats5a107plz.pdf pdf_icon

NVATS4A103PZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m , 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

 9.3. Size:862K  onsemi
nvats5a304plz.pdf pdf_icon

NVATS4A103PZ

NVATS5A304PLZ Power MOSFET 60 V, 6.5 m , 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu

Otros transistores... NTTFS6H850N, NTTFS6H850NL, NTTFS6H854NL, NTTFS6H860NL, NTTFS6H880NL, NTTFS8D1N08H, NTUD3174NZ, NTZD3158P, MMIS60R580P, NVATS5A106PLZ, PM2301, PM2302, PM3400, PM3401, KS2302AA, SI12N60-F, SI12N60