NVATS4A103PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVATS4A103PZ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 400 nS
Cossⓘ - Capacitancia de salida: 555 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: ATPAK
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NVATS4A103PZ Datasheet (PDF)
nvats4a103pz.pdf

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Otros transistores... NTTFS6H850N , NTTFS6H850NL , NTTFS6H854NL , NTTFS6H860NL , NTTFS6H880NL , NTTFS8D1N08H , NTUD3174NZ , NTZD3158P , 2N7002 , NVATS5A106PLZ , PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 .
History: AUIRF1404S | STT6602 | NCEP035N72GU | NCE6004 | SRT10N047HT | NTGS3130N | SFP055N100C2
History: AUIRF1404S | STT6602 | NCEP035N72GU | NCE6004 | SRT10N047HT | NTGS3130N | SFP055N100C2



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