Справочник MOSFET. NVATS4A103PZ

 

NVATS4A103PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NVATS4A103PZ

Маркировка: ATP103

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 60 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 2.6 V

Максимально допустимый постоянный ток стока |Id|: 60 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 47 nC

Время нарастания (tr): 400 ns

Выходная емкость (Cd): 555 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.013 Ohm

Тип корпуса: ATPAK

Аналог (замена) для NVATS4A103PZ

 

 

NVATS4A103PZ Datasheet (PDF)

0.1. nvats4a103pz.pdf Size:427K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS4A103PZ Power MOSFET 30 V, 13 m, 60 A, P-Channel The NVATS4A103PZ is a power MOSFET designed for compact size and www.onsemi.com high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features 13 m @ 10 V Low On-Resistance 30 V 60A

9.1. nvats5a113plz.pdf Size:823K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS5A113PLZ Power MOSFET 60 V, 29.5 m, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features Low On-Resistance 29.5 m @ 10 V High Current Capability

9.2. nvats5a106plz.pdf Size:781K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS5A106PLZ Power MOSFET 40 V, 25 m, 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 25 m @ 10 V

 9.3. nvats5a114plz.pdf Size:941K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance16 m @ 10 V High Current Capability60 V

9.4. nvats5a107plz.pdf Size:805K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

 9.5. nvats5a112plz.pdf Size:859K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS5A112PLZ Power MOSFET 60 V, 43 m, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive www.onsemi.com applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 43 m @ 10 V 60

9.6. nvats5a304plz.pdf Size:862K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS5A304PLZ Power MOSFET 60 V, 6.5 m, 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu

9.7. nvats68301pz.pdf Size:460K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS68301PZ Power MOSFET 100 V, 75 m, 31 A, P-Channel The NVATS68301PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance High Current Capability 100 V

9.8. nvats5a302plz.pdf Size:462K _onsemi

NVATS4A103PZ
NVATS4A103PZ

NVATS5A302PLZ Power MOSFET 60 V, 13 m, 80 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 13 m @ 10 V High Current Capability 60

Другие MOSFET... CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , IRFZ44A , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 .

 

 
Back to Top