NVATS4A103PZ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVATS4A103PZ
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 400 ns
Cossⓘ - Выходная емкость: 555 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: ATPAK
Аналог (замена) для NVATS4A103PZ
NVATS4A103PZ Datasheet (PDF)
nvats4a103pz.pdf

NVATS4A103PZ Power MOSFET 30 V, 13 m, 60 A, P-Channel The NVATS4A103PZ is a power MOSFET designed for compact size and www.onsemi.com high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features 13 m @ 10 V Low On-Resistance 30 V 60A
nvats5a114plz.pdf

NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance16 m @ 10 V High Current Capability60 V
nvats5a107plz.pdf

NVATS5A107PLZ Power MOSFET 40 V, 17 m, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40
nvats5a304plz.pdf

NVATS5A304PLZ Power MOSFET 60 V, 6.5 m, 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu
Другие MOSFET... NTTFS6H850N , NTTFS6H850NL , NTTFS6H854NL , NTTFS6H860NL , NTTFS6H880NL , NTTFS8D1N08H , NTUD3174NZ , NTZD3158P , 2N7002 , NVATS5A106PLZ , PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 .
History: HY1506P | BLV730



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