Справочник MOSFET. NVATS4A103PZ

 

NVATS4A103PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVATS4A103PZ
   Маркировка: ATP103
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 47 nC
   trⓘ - Время нарастания: 400 ns
   Cossⓘ - Выходная емкость: 555 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: ATPAK

 Аналог (замена) для NVATS4A103PZ

 

 

NVATS4A103PZ Datasheet (PDF)

 ..1. Size:427K  onsemi
 nvats4a103pz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS4A103PZ Power MOSFET 30 V, 13 m, 60 A, P-Channel The NVATS4A103PZ is a power MOSFET designed for compact size and www.onsemi.com high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features 13 m @ 10 V Low On-Resistance 30 V 60A

 9.1. Size:941K  onsemi
 nvats5a114plz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance16 m @ 10 V High Current Capability60 V

 9.2. Size:805K  onsemi
 nvats5a107plz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

 9.3. Size:862K  onsemi
 nvats5a304plz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS5A304PLZ Power MOSFET 60 V, 6.5 m, 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu

 9.4. Size:823K  onsemi
 nvats5a113plz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS5A113PLZ Power MOSFET 60 V, 29.5 m, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features Low On-Resistance 29.5 m @ 10 V High Current Capability

 9.5. Size:462K  onsemi
 nvats5a302plz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS5A302PLZ Power MOSFET 60 V, 13 m, 80 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 13 m @ 10 V High Current Capability 60

 9.6. Size:460K  onsemi
 nvats68301pz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS68301PZ Power MOSFET 100 V, 75 m, 31 A, P-Channel The NVATS68301PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance High Current Capability 100 V

 9.7. Size:781K  onsemi
 nvats5a106plz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS5A106PLZ Power MOSFET 40 V, 25 m, 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 25 m @ 10 V

 9.8. Size:859K  onsemi
 nvats5a112plz.pdf

NVATS4A103PZ NVATS4A103PZ

NVATS5A112PLZ Power MOSFET 60 V, 43 m, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive www.onsemi.com applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 43 m @ 10 V 60

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