Справочник MOSFET. NVATS4A103PZ

 

NVATS4A103PZ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NVATS4A103PZ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 400 ns
   Cossⓘ - Выходная емкость: 555 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: ATPAK
     - подбор MOSFET транзистора по параметрам

 

NVATS4A103PZ Datasheet (PDF)

 ..1. Size:427K  onsemi
nvats4a103pz.pdfpdf_icon

NVATS4A103PZ

NVATS4A103PZ Power MOSFET 30 V, 13 m, 60 A, P-Channel The NVATS4A103PZ is a power MOSFET designed for compact size and www.onsemi.com high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features 13 m @ 10 V Low On-Resistance 30 V 60A

 9.1. Size:941K  onsemi
nvats5a114plz.pdfpdf_icon

NVATS4A103PZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance16 m @ 10 V High Current Capability60 V

 9.2. Size:805K  onsemi
nvats5a107plz.pdfpdf_icon

NVATS4A103PZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

 9.3. Size:862K  onsemi
nvats5a304plz.pdfpdf_icon

NVATS4A103PZ

NVATS5A304PLZ Power MOSFET 60 V, 6.5 m, 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AP4N4R2H | YTF840 | BSS138A | STF20NM60D | AONU32320 | 2SJ542

 

 
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