NVATS4A103PZ MOSFET. Datasheet pdf. Equivalent
Type Designator: NVATS4A103PZ
Marking Code: ATP103
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 555 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: ATPAK
NVATS4A103PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVATS4A103PZ Datasheet (PDF)
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