All MOSFET. NVATS4A103PZ Datasheet

 

NVATS4A103PZ Datasheet and Replacement


   Type Designator: NVATS4A103PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 400 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: ATPAK
 

 NVATS4A103PZ substitution

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NVATS4A103PZ Datasheet (PDF)

 ..1. Size:427K  onsemi
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NVATS4A103PZ

NVATS4A103PZ Power MOSFET 30 V, 13 m, 60 A, P-Channel The NVATS4A103PZ is a power MOSFET designed for compact size and www.onsemi.com high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features 13 m @ 10 V Low On-Resistance 30 V 60A

 9.1. Size:941K  onsemi
nvats5a114plz.pdf pdf_icon

NVATS4A103PZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance16 m @ 10 V High Current Capability60 V

 9.2. Size:805K  onsemi
nvats5a107plz.pdf pdf_icon

NVATS4A103PZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

 9.3. Size:862K  onsemi
nvats5a304plz.pdf pdf_icon

NVATS4A103PZ

NVATS5A304PLZ Power MOSFET 60 V, 6.5 m, 120 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 6.5 m @ 10 V 60 V 120 A High Cu

Datasheet: NTTFS6H850N , NTTFS6H850NL , NTTFS6H854NL , NTTFS6H860NL , NTTFS6H880NL , NTTFS8D1N08H , NTUD3174NZ , NTZD3158P , 2N7002 , NVATS5A106PLZ , PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 .

History: FQPF14N30 | RJ1G12BGN | FHF15N60A

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