PM2301 Todos los transistores

 

PM2301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PM2301
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55(max) nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: SOT23
 

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PM2301 Datasheet (PDF)

 ..1. Size:474K  pn silicon
pm2301.pdf pdf_icon

PM2301

PM2301 20V P-Channel MOSFET Description Applications The PM2301 uses advanced Trench technology and designs to provide excellent R with low gate charge. PA Switch DS(ON)This device is suitable for use in PWM, load switching and Load Switch general purpose applications. Marking Information Features TrenchFET Power MOSFET 2301 Dimensions and Pin Configurati

 0.1. Size:169K  sino
apm2301ca.pdf pdf_icon

PM2301

APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and

 0.2. Size:229K  lowpower
lpm2301b3f.pdf pdf_icon

PM2301

Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features -20V/-2.0A,RDS(ON)=170m(typ.)@VGS=-2.5V The LPM2301 is the P-channel logic enhancement -20V/-2.0A,RDS(ON)=130m(typ.)@VGS=-4.5V mode power field effect transistors are produced Super high density cell design for extremely low using high

 0.3. Size:695K  cn shikues
apm2301aac.pdf pdf_icon

PM2301

APM2301AACP-Channel Enhancement Mode MOSFET Feature DS(ON) GS -20V/-3A R = 120m(MAX) @V = -4.5V. DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SC-59 for Surface Mount Package SC-59 Applications Power Management Portable Equipment and Battery Powered Systems. AT =25 U

Otros transistores... NTTFS6H854NL , NTTFS6H860NL , NTTFS6H880NL , NTTFS8D1N08H , NTUD3174NZ , NTZD3158P , NVATS4A103PZ , NVATS5A106PLZ , AO3407 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 , SI20N03 , SI25N10 .

History: IRL40S212 | KIA2N60H-252 | NCE3008N | RU30E4B | WMQ37N03T1 | TMC8N65H | HRS88N08K

 

 
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