PM2301 MOSFET. Datasheet pdf. Equivalent

PM2301 20V P-Channel MOSFET Description Applications The PM2301 uses advanced Trench technology and designs to provide excellent R with low gate charge. PA Switch DS(ON)This device is suitable for use in PWM, load switching and Load Switch general purpose applications. Marking Information Features TrenchFET Power MOSFET 2301 Dimensions and Pin Configurati

APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and

Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features -20V/-2.0A,RDS(ON)=170m(typ.)@VGS=-2.5V The LPM2301 is the P-channel logic enhancement -20V/-2.0A,RDS(ON)=130m(typ.)@VGS=-4.5V mode power field effect transistors are produced Super high density cell design for extremely low using high

APM2301AACP-Channel Enhancement Mode MOSFET Feature DS(ON) GS -20V/-3A R = 120m(MAX) @V = -4.5V. DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SC-59 for Surface Mount Package SC-59 Applications Power Management Portable Equipment and Battery Powered Systems. AT =25 U

APM2301ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO

HPM2301P-Channel MOSFETs-2.8A,-20VP P HPM2301P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -2.8A, RDS(ON)=100m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea