SI4953 Todos los transistores

 ..1. Size:3156K  cn szxunrui
 si4953.pdf

 0.1. Size:242K  vishay
 si4953ady.pdf

Si4953ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.053 at VGS = - 10 V - 4.9 TrenchFET Power MOSFETs - 30 0.090 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 To

 0.2. Size:51K  vishay
 si4953dy.pdf

Si4953DY Vishay Siliconix Dual P-Channel 30-V(D-S) MOSFET FEATURES PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = -10 V -4.9 -30 30 0.095 @ VGS = -4.5 V -3.6 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D1 D2 D2 Ordering Information Si4953DY Si4953DY-T1 (with Tape and Reel) P-Channel MOSFET P-Channel MOSFET ABSOLUTE M

 0.3. Size:1498K  kexin
 si4953ady.pdf

SMD Type MOSFET Dual P-Channel MOSFET SI4953ADY (KI4953ADY) SOP-8 Unit mm Features VDS (V) =-30V ID =-4.9 A (VGS =-10V) 1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 90m (VGS =-4.5V) 1 S1 5 D2 6 D2 2 G1 7 D1 3 S2 8 D1 4 G2 S1 S2 G1 G2 D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Unit Drain-Sourc

 0.4. Size:1324K  kexin
 si4953dy.pdf

SMD Type MOSFET Dual P-Channel MOSFET SI4953DY (KI4953DY) SOP-8 Features VDS (V) =-30V ID =-4.9 A (VGS =-10V) 1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 95m (VGS =-4.5V) 1 Source1 5 Drain2 6 Drain2 2 Gate1 7 Drain1 3 Source2 S1 S2 8 Drain1 4 Gate2 G1 G2 D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

 0.5. Size:864K  cn vbsemi
 si4953ady-t1-e3.pdf

SI4953ADY-T1-E3 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5

 0.6. Size:864K  cn vbsemi
 si4953dy-t1-e3.pdf

SI4953DY-T1-E3 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 T