All MOSFET. SI4953 Datasheet

 

SI4953 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: SO8L SOP8

 SI4953 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4953 Datasheet (PDF)

 ..1. Size:3156K  cn szxunrui
 si4953.pdf

SI4953 SI4953

SOP-8L Dual -30V P-Channel PowerTrench MOSFET SI4953DualSI4953 P-Channel -30V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOP-8 D2D20.059@-10V.D1-30V -5.3A D10.089@-4.5VG2GS2G1 SSS1SO-8 SPin 1Equivalent Cir cuitD1 D2 General FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageG1 G2 S1 S2 MARKINGAPPLICATION

 0.1. Size:242K  vishay
 si4953ady.pdf

SI4953 SI4953

Si4953ADYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.053 at VGS = - 10 V - 4.9 TrenchFET Power MOSFETs - 300.090 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25To

 0.2. Size:51K  vishay
 si4953dy.pdf

SI4953 SI4953

Si4953DYVishay SiliconixDual P-Channel 30-V(D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.053 @ VGS = -10 V -4.9-30300.095 @ VGS = -4.5 V -3.6S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D1 D2 D2Ordering Information: Si4953DYSi4953DY-T1 (with Tape and Reel) P-Channel MOSFET P-Channel MOSFETABSOLUTE M

 0.3. Size:1498K  kexin
 si4953ady.pdf

SI4953 SI4953

SMD Type MOSFETDual P-Channel MOSFETSI4953ADY (KI4953ADY)SOP-8 Unit:mm Features VDS (V) =-30V ID =-4.9 A (VGS =-10V)1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 90m (VGS =-4.5V)1 S1 5 D2 6 D22 G17 D13 S28 D14 G2S1 S2G1 G2D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady State Unit Drain-Sourc

 0.4. Size:1324K  kexin
 si4953dy.pdf

SI4953 SI4953

SMD Type MOSFETDual P-Channel MOSFETSI4953DY (KI4953DY)SOP-8 Features VDS (V) =-30V ID =-4.9 A (VGS =-10V)1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 95m (VGS =-4.5V)1 Source1 5 Drain26 Drain22 Gate17 Drain13 Source2S1 S28 Drain14 Gate2G1 G2D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

 0.5. Size:864K  cn vbsemi
 si4953ady-t1-e3.pdf

SI4953 SI4953

SI4953ADY-T1-E3www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

 0.6. Size:864K  cn vbsemi
 si4953dy-t1-e3.pdf

SI4953 SI4953

SI4953DY-T1-E3www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25T

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDML7610S

 

 
Back to Top