NVD5C688NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVD5C688NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 18 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0274 Ohm

Encapsulados: DPAK

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NVD5C688NL datasheet

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NVD5C688NL

NVD5C688NL Power MOSFET 60 V, 27.4 mW, 17 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 27.4 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise note

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NVD5C688NL

NVD5C648NL MOSFET Power, Single N-Channel 60 V, 4.1 mW, 89 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable 4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 60 V 89 A Compliant 5.7 mW @ 4.5 V MAXIMUM RATINGS (TJ

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 nvd5c632nl.pdf pdf_icon

NVD5C688NL

NVD5C632NL Power MOSFET 60 V, 2.5 mW, 155 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 2.5 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

 8.3. Size:226K  onsemi
 nvd5c648nl.pdf pdf_icon

NVD5C688NL

NVD5C648NL MOSFET Power, Single N-Channel 60 V, 4.1 mW, 89 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable 4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 60 V 89 A Compliant 5.7 mW @ 4.5 V MAXIMUM RATINGS (TJ

MOSTRAR MÁS

Otros transistores... NVBLS1D1N08H, NVBLS4D0N15MC, NVC3S5A51PLZ, NVD5C446N, NVD5C454N, NVD5C454NL, NVD5C632NL, NVD5C668NL, 8N60, NVD6415ANL, NVF2955P, NVH4L040N120SC1, NVH4L080N120SC1, NVH4L160N120SC1, NVHL020N120SC1, NVHL025N65S3, NVHL027N65S3F