NVD5C688NL PDF and Equivalents Search

 ..1. Size:191K  onsemi
 nvd5c688nl.pdf

NVD5C688NL Power MOSFET 60 V, 27.4 mW, 17 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 27.4 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise note... See More ⇒

 8.1. Size:186K  1
 nvd5c648nl.pdf

NVD5C648NL MOSFET Power, Single N-Channel 60 V, 4.1 mW, 89 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable 4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 60 V 89 A Compliant 5.7 mW @ 4.5 V MAXIMUM RATINGS (TJ... See More ⇒

 8.2. Size:86K  onsemi
 nvd5c632nl.pdf

NVD5C632NL Power MOSFET 60 V, 2.5 mW, 155 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 2.5 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted... See More ⇒

 8.3. Size:226K  onsemi
 nvd5c648nl.pdf

NVD5C648NL MOSFET Power, Single N-Channel 60 V, 4.1 mW, 89 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable 4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 60 V 89 A Compliant 5.7 mW @ 4.5 V MAXIMUM RATINGS (TJ... See More ⇒

 8.4. Size:190K  onsemi
 nvd5c668nl.pdf

NVD5C668NL Power MOSFET 60 V, 8.9 mW, 49 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 8.9 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)... See More ⇒

 8.5. Size:265K  inchange semiconductor
 nvd5c648nl.pdf

isc N-Channel MOSFET Transistor NVD5C648NL FEATURES Drain Current I = 89A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R 4.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

 8.6. Size:286K  inchange semiconductor
 nvd5c668nl.pdf

isc N-Channel MOSFET Transistor NVD5C668NL FEATURES Drain Current I = 49A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒