NVD5C688NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NVD5C688NL
Маркировка: 5C688L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 18 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 17 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 7 nC
Время нарастания (tr): 42 ns
Выходная емкость (Cd): 170 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0274 Ohm
Тип корпуса: DPAK
Аналог (замена) для NVD5C688NL
NVD5C688NL Datasheet (PDF)
nvd5c688nl.pdf
NVD5C688NLPower MOSFET60 V, 27.4 mW, 17 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID27.4 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise note
nvd5c648nl.pdf
NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ
nvd5c632nl.pdf
NVD5C632NLPower MOSFET60 V, 2.5 mW, 155 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID2.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted
nvd5c648nl.pdf
NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ
nvd5c668nl.pdf
NVD5C668NLPower MOSFET60 V, 8.9 mW, 49 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID8.9 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
nvd5c648nl.pdf
isc N-Channel MOSFET Transistor NVD5C648NLFEATURESDrain Current I = 89A@ T =25D CDrain Source Voltage-V = 60V(Min)DSSStatic Drain-Source On-ResistanceR :4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
nvd5c668nl.pdf
isc N-Channel MOSFET Transistor NVD5C668NLFEATURESDrain Current : I = 49A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: ME12N04-G
History: ME12N04-G
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C