2SK2133 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2133
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 420 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de 2SK2133 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK2133 datasheet
8.4. Size:124K 1
2sk2137.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2137 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2137 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Low On-Resistance 2SK2137 RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis
8.6. Size:135K 1
2sk2138 2sk2138-z.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect (in millimeters) Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 FEATURES 1.3 0.2 10.0 Low On-state Resistance RDS(on) = 2.4 MAX.
8.7. Size:71K renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:111K nec
2sk2139.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2139 is N-Channel Power MOS Field Effect Transistor (in millimeters) designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Low On-Resistance RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis
8.11. Size:31K panasonic
2sk2130.pdf
Power F-MOS FETs 2SK2130 2SK2130 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 15mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 45ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive
8.12. Size:33K hitachi
2sk213 2sk214 2sk215 2sk216.pdf
2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. D
Otros transistores... 2SK2070, 2SK2090, 2SK2109, 2SK2110, 2SK2111, 2SK2112, 2SK2131, 2SK2132, 5N65, 2SK2134, 2SK2135, 2SK2136, 2SK2137, 2SK2138, 2SK2139, 2SK2140, 2SK2141
