2SK2133 Datasheet and Replacement
Type Designator: 2SK2133
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 16
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 420
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26
Ohm
Package:
TO220
-
MOSFET ⓘ Cross-Reference Search
2SK2133 Datasheet (PDF)
8.4. Size:124K 1
2sk2137.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2137SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2137 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-Resistance2SK2137: RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis
8.6. Size:135K 1
2sk2138 2sk2138-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2138, 2SK2138-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 2.4 MAX.
8.7. Size:71K renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:111K nec
2sk2139.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2139SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2139 is N-Channel Power MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-ResistanceRDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis
8.11. Size:31K panasonic
2sk2130.pdf
Power F-MOS FETs 2SK21302SK2130Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 45nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
8.12. Size:33K hitachi
2sk213 2sk214 2sk215 2sk216.pdf
2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D
Datasheet: 2SK2070
, 2SK2090
, 2SK2109
, 2SK2110
, 2SK2111
, 2SK2112
, 2SK2131
, 2SK2132
, IRF4905
, 2SK2134
, 2SK2135
, 2SK2136
, 2SK2137
, 2SK2138
, 2SK2139
, 2SK2140
, 2SK2141
.
History: CEP10N65
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