2SK2133
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK2133
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 16
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 40
ns
Cossⓘ - Выходная емкость: 420
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.26
Ohm
Тип корпуса:
TO220
Аналог (замена) для 2SK2133
-
подбор ⓘ MOSFET транзистора по параметрам
2SK2133
Datasheet (PDF)
8.4. Size:124K 1
2sk2137.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2137SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2137 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-Resistance2SK2137: RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis
8.6. Size:135K 1
2sk2138 2sk2138-z.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2138, 2SK2138-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 2.4 MAX.
8.7. Size:71K renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:111K nec
2sk2139.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2139SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2139 is N-Channel Power MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-ResistanceRDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis
8.11. Size:31K panasonic
2sk2130.pdf 
Power F-MOS FETs 2SK21302SK2130Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 45nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
8.12. Size:33K hitachi
2sk213 2sk214 2sk215 2sk216.pdf 
2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D
Другие MOSFET... 2SK2070
, 2SK2090
, 2SK2109
, 2SK2110
, 2SK2111
, 2SK2112
, 2SK2131
, 2SK2132
, 4435
, 2SK2134
, 2SK2135
, 2SK2136
, 2SK2137
, 2SK2138
, 2SK2139
, 2SK2140
, 2SK2141
.
History: CED21A2
| MMP2323
| BL3N100E-A
| HSW3415
| FQB27P06TM
| PJA3402
| CEP04N7G
