STP8N50XI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP8N50XI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 75 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: ISOWATT221

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STP8N50XI Datasheet (PDF)

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stp8n50xi.pdf pdf_icon

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9.2. Size:326K st
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STP8NC60STP8NC60FPN-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP8NC60 600 V

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP8NK80ZFPDESCRIPTIONDrain Current I =6.2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSS100% avalanche testedFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETE

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