All MOSFET. STP8N50XI Datasheet

 

STP8N50XI Datasheet and Replacement


   Type Designator: STP8N50XI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: ISOWATT221
 

 STP8N50XI substitution

   - MOSFET ⓘ Cross-Reference Search

 

STP8N50XI Datasheet (PDF)

 ..1. Size:307K  st
stp8n50xi.pdf pdf_icon

STP8N50XI

 9.1. Size:698K  st
stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STP8N50XI

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 9.2. Size:326K  st
stp8nc60.pdf pdf_icon

STP8N50XI

STP8NC60STP8NC60FPN-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP8NC60 600 V

 9.3. Size:554K  st
stb8nm60t4 std5nm60-1 std5nm60t4 stp8nm60fp.pdf pdf_icon

STP8N50XI

STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

Datasheet: STP6NA80 , STP6NA80FI , STP7N20 , STP7N20FI , STP7NA40 , STP7NA40FI , STP7NA60 , STP7NA60FI , STP80NF70 , STP8NA50 , STP8NA50FI , STP9N30 , STP9NA50 , STP9NA50FI , STV10NA40 , STV12N20 , STV18N20 .

Keywords - STP8N50XI MOSFET datasheet

 STP8N50XI cross reference
 STP8N50XI equivalent finder
 STP8N50XI lookup
 STP8N50XI substitution
 STP8N50XI replacement

 

 
Back to Top

 


 
.