NVMFS5H663NLWF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NVMFS5H663NL,NVMFS5H663NLWFMOSFET Power, SingleN-Channel60 V, 7.2 mW, 67 Awww.onsemi.comNVMFS5H663NLWF - Wettable Flank Option for EnhancedOptical Inspection.V(BR)DSS RDS(ON) MAX ID MAXFeatures Small Footprint (5x6 mm) for Compact Design7.2 mW @ 10 V60 V67 A Low RDS(on) to Minimize Conduction Losses10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri

NVMFS5H663NL,NVMFS5H663NLWFMOSFET Power, SingleN-Channel60 V, 7.2 mW, 67 Awww.onsemi.comNVMFS5H663NLWF - Wettable Flank Option for EnhancedOptical Inspection.V(BR)DSS RDS(ON) MAX ID MAXFeatures Small Footprint (5x6 mm) for Compact Design7.2 mW @ 10 V60 V67 A Low RDS(on) to Minimize Conduction Losses10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri

MOSFET Power, SingleN-Channel60 V, 1.3 mW, 250 ANVMFS5H600NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.3 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

NVMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8 mW

NVMFS5C404NLPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.7

NVMFS5C460NMOSFET Power, SingleN-Channel40 V, 5.3 mW, 71 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NWF - Wettable Flank Option for Enhanced OpticalInspection 40 V 5.3 mW @ 10 V 71 A AEC-Q101 Qualified

NVMFS5C456NLMOSFET Power, SingleN-Channel40 V, 3.7 mW, 87 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NLWF - Wettable Flank Option for Enhanced Optical3.7 mW @ 10 VInspection40 V 87 A6.0 mW @ 4.5 V

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANVMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical60 V 7.0 mW @ 10 V 71 AInspection AEC-Q101 Qualifi

NVMFS5832NLPower MOSFET40 V, 4.2 mW, 120 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAX4.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

NVMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.2 mW

NVMFS5C680NLMOSFET Power, SingleN-Channel60 V, 27.5 mW, 21 AFeatures Small Footprint (5 x 6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable27.5 mW @ 10 V60 V 21 A These D

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6

NVMFS5C460NLMOSFET Power, SingleN-Channel40 V, 4.5 mW, 78 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NLWF - Wettable Flank Option for Enhanced Optical4.5 mW @ 10 VInspection 40 V 78 A7.2 mW @ 4.5 V

NVMFS5C410NLPower MOSFET40 V, 0.9 mW, 315 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.9

MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANVMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical60 V 10.7 mW @ 10 V 50 AInspection AEC-Q101 Quali

MOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 ANVMFS5C628NFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C628NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 3.0 mW @ 10 V 150 A AEC-Q101 Qualifie

NVMFS5C638NLMOSFET Power, SingleN-Channel60 V, 3.0 mW, 133 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical3.0 mW @ 10 VInspection60 V 133 A AEC-Q101 Qua

NVMFS5833NPower MOSFET40 V, 7.5 mW, 86 A, Single N-Channel,SO-8FLFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable NVMFS5833NWF - Wettable Franks Option for Enhanced Optical40 V 7.5 mW @ 10 V 86 AInspection These Devices are Pb-Free and are RoHS CompliantD (5)

NVMFS5C468NMOSFET Power, SingleN-Channel40 V, 12 mW, 35 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NWF - Wettable Flank Option for Enhanced Optical40 V 12 mW @ 10 V 35 AInspection AEC-Q101 Qualified

NVMFS5C404NPower MOSFET40 V, 0.7 mW, 378 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 0.7

NVMFS5C682NLMOSFET Power, SingleN-Channel60 V, 21 mW, 25 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C682NLWF - Wettable Flank Option for Enhanced Optical21 mW @ 10 V60 V 25 AInspection31.5 mW @ 4.5 V

MOSFET Power, SingleN-Channel60 V, 9.2 mW, 50 ANVMFS5C673NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical9.2 mW @ 10 V60 V 50 AInspection13 mW @ 4.5 V

NVMFS5A160PLZMOSFET Power, SingleP-Channel-60 V, -100 A, 7.7 mWFeatureswww.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesVDSS RDS(ON) MAX ID MAX NVMFS5A160PLZWF: Wettable Flank Option for Enhanced Optical-60 V 7.7 mW @ -10 V -100 AInspection10.5 mW @ -4.5 V AEC-Q101 Qualified and PPAP Capable Thes

NVMFS5830NLPower MOSFET40 V, 2.3 mW, 185 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are

NTMFS5844NL,NVMFS5844NLMOSFET Power, Single,N-Channel60 V, 61 A, 12 mWFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product12 mW @ 10 V60 V 61 A NVMFS Prefix for Automotive and

NVMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.5 mW

MOSFET Power, SingleN-Channel40 V, 1.2 mW, 237 ANVMFS5C426NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C426NLWF - Wettable Flank Option for Enhanced Optical1.2 mW @ 10 VInspection40 V 237 A1.8 mW @ 4.5 V

NVMFS5A140PLZMOSFET Power, SingleP-Channel-40 V, -140 A, 4.2 mWFeatureswww.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical VDSS RDS(ON) MAX ID MAXInspection-40 V 4.2 mW @ -10 V -140 A AEC-Q101 Qualified and PPAP Capable7.2 mW @ -4.5 V These

NVMFS5885NLPower MOSFET60 V, 15 mW, 39 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVMFS5885NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Com

NVMFS5C612NPower MOSFETSingle N-Channel, 60 V, 1.65 mW, 225 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 1.6

NVMFS5C430NMOSFET Power, SingleN-Channel40 V, 1.7 mW, 185 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NWF - Wettable Flank Option for Enhanced Optical40 V 1.7 mW @ 10 V 185 AInspection AEC-Q101 Qualif

NVMFS5C406NLMOSFET Power, SingleN-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C406NLWF - Wettable Flank Option for Enhanced Optical0.7 mW @ 10 VInspection40 V 362 A AEC-Q101 Qua

NVMFS5C430NLMOSFET Power, SingleN-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NLWF - Wettable Flank Option for Enhanced Optical1.4 mW @ 10 V40 V 200 AInspection2.2 mW @ 4.5 V

NVMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C423NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.0 mW

NVMFS5C468NLMOSFET Power, SingleN-Channel40 V, 10.3 mW, 37 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NLWF - Wettable Flank Option for Enhanced Optical10.3 mW @ 10 VInspection40 V 37 A17.6 mW @ 4.5 V

NVMFS5C466NMOSFET Power, SingleN-Channel40 V, 8.1 mW, 49 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C466NWF - Wettable Flank Option for Enhanced Optical40 V 8.1 mW @ 10 V 49 AInspection AEC-Q101 Qualifie

NVMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C442NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.3

NVMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.1 mW @

NVMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C645NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.0 mW

NVMFS5C442NLPower MOSFET40 V, 2.8 mW, 127 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com NVMFS5C442NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8

MOSFET - Power, SingleN-Channel40 V, 0.8 mW, 353 ANVMFS5C406NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C406NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 0.8 mW @ 10 V 353 A AEC-Q101 Qualifie

NVMFS5C426NPower MOSFET40 V, 1.3 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 1.3

NVMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C646NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.7 mW @

NVMFS5834NLProduct PreviewPower MOSFET40 V, 9.3 mW, 76 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

NVMFS5C450NMOSFET Power, SingleN-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C450NWF - Wettable Flank Option for Enhanced Optical40 V 3.3 mW @ 10 V 102 AInspection AEC-Q101 Qualif

NVMFS5113PLPower MOSFET-60 V, 14 mW, -64 A, Single P-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com NVMFS5113PLWF - Wettable Flanks Product NVM Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) IDUnique Site and Control Change Requirements; AEC-Q10114 mW @ -

NVMFS5C628NLMOSFET Power, SingleN-Channel60 V, 2.4 mW, 150 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C628NLWF - Wettable Flank Option for Enhanced Optical2.4 mW @ 10 V60 V 150 AInspection3.3 mW @ 4.5 V

NVMFS5826NLPower MOSFET60 V, 24 mW, 26 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices and RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX24 mW @ 10 V60 VMAXIMUM RATINGS

NTMFS5844NL,NVMFS5844NLPower MOSFET60 V, 61 A, 12 mW, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) MAX ID MAXUnique Site and Control Change Requirements;

MOSFET Power, SingleN-Channel40 V, 4.5 mW, 80 ANVMFS5C456NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NWF - Wettable Flank Option for Enhanced Optical40 V 4.5 mW @ 10 V 80 AInspection AEC-Q101 Qualifie

MOSFET - Power, SingleN-Channel40 V, 0.92 mW, 300 ANVMFS5C410NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 0.92 mW @ 10 V 300 A AEC-Q101 Qualif