NVMFS5H663NLWF Specs and Replacement

Type Designator: NVMFS5H663NLWF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52.7 nS

Cossⓘ - Output Capacitance: 213 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: DFN5

NVMFS5H663NLWF substitution

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NVMFS5H663NLWF datasheet

 ..1. Size:170K  onsemi
nvmfs5h663nl nvmfs5h663nlwf.pdf pdf_icon

NVMFS5H663NLWF

NVMFS5H663NL, NVMFS5H663NLWF MOSFET Power, Single N-Channel 60 V, 7.2 mW, 67 A www.onsemi.com NVMFS5H663NLWF - Wettable Flank Option for Enhanced Optical Inspection. V(BR)DSS RDS(ON) MAX ID MAX Features Small Footprint (5x6 mm) for Compact Design 7.2 mW @ 10 V 60 V 67 A Low RDS(on) to Minimize Conduction Losses 10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri... See More ⇒

 2.1. Size:170K  onsemi
nvmfs5h663nl.pdf pdf_icon

NVMFS5H663NLWF

NVMFS5H663NL, NVMFS5H663NLWF MOSFET Power, Single N-Channel 60 V, 7.2 mW, 67 A www.onsemi.com NVMFS5H663NLWF - Wettable Flank Option for Enhanced Optical Inspection. V(BR)DSS RDS(ON) MAX ID MAX Features Small Footprint (5x6 mm) for Compact Design 7.2 mW @ 10 V 60 V 67 A Low RDS(on) to Minimize Conduction Losses 10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri... See More ⇒

 6.1. Size:172K  onsemi
nvmfs5h600nl.pdf pdf_icon

NVMFS5H663NLWF

MOSFET Power, Single N-Channel 60 V, 1.3 mW, 250 A NVMFS5H600NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.3 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoH... See More ⇒

 8.1. Size:160K  onsemi
nvmfs5c450nl.pdf pdf_icon

NVMFS5H663NLWF

NVMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.8 mW ... See More ⇒

Detailed specifications: NVMFS5C670N, NVMFS5C673N, NVMFS5C673NL, NVMFS5C677NL, NVMFS5C680NL, NVMFS5C682NL, NVMFS5H600NL, NVMFS5H663NL, IRFP450, NVMFS6B14NL, NVMFS6B75NL, NVMFS6D1N08H, NVMFS6H800NL, NVMFS6H801N, NVMFS6H801NL, NVMFS6H818N, NVMFS6H818NL

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