NVMFS5H663NLWF. Аналоги и основные параметры
Наименование производителя: NVMFS5H663NLWF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 67 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 52.7 ns
Cossⓘ - Выходная емкость: 213 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
Тип корпуса: DFN5
Аналог (замена) для NVMFS5H663NLWF
- подборⓘ MOSFET транзистора по параметрам
NVMFS5H663NLWF даташит
nvmfs5h663nl nvmfs5h663nlwf.pdf
NVMFS5H663NL, NVMFS5H663NLWF MOSFET Power, Single N-Channel 60 V, 7.2 mW, 67 A www.onsemi.com NVMFS5H663NLWF - Wettable Flank Option for Enhanced Optical Inspection. V(BR)DSS RDS(ON) MAX ID MAX Features Small Footprint (5x6 mm) for Compact Design 7.2 mW @ 10 V 60 V 67 A Low RDS(on) to Minimize Conduction Losses 10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri
nvmfs5h663nl.pdf
NVMFS5H663NL, NVMFS5H663NLWF MOSFET Power, Single N-Channel 60 V, 7.2 mW, 67 A www.onsemi.com NVMFS5H663NLWF - Wettable Flank Option for Enhanced Optical Inspection. V(BR)DSS RDS(ON) MAX ID MAX Features Small Footprint (5x6 mm) for Compact Design 7.2 mW @ 10 V 60 V 67 A Low RDS(on) to Minimize Conduction Losses 10 mW @ 4.5 V Low QG and Capacitance to Minimize Dri
nvmfs5h600nl.pdf
MOSFET Power, Single N-Channel 60 V, 1.3 mW, 250 A NVMFS5H600NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.3 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoH
nvmfs5c450nl.pdf
NVMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.8 mW
nvmfs5c404nl.pdf
NVMFS5C404NL Power MOSFET 40 V, 0.75 mW, 352 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 0.7
nvmfs5c460n.pdf
NVMFS5C460N MOSFET Power, Single N-Channel 40 V, 5.3 mW, 71 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NWF - Wettable Flank Option for Enhanced Optical Inspection 40 V 5.3 mW @ 10 V 71 A AEC-Q101 Qualified
nvmfs5c670n.pdf
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NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com AEC-Q101 Qualified These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX 4.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
nvmfs5c604nl.pdf
NVMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.2 mW
nvmfs5c680nl.pdf
NVMFS5C680NL MOSFET Power, Single N-Channel 60 V, 27.5 mW, 21 A Features Small Footprint (5 x 6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 27.5 mW @ 10 V 60 V 21 A These D
ntmfs5834nl nvmfs5834nl.pdf
NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6
nvmfs5c460nl.pdf
NVMFS5C460NL MOSFET Power, Single N-Channel 40 V, 4.5 mW, 78 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NLWF - Wettable Flank Option for Enhanced Optical 4.5 mW @ 10 V Inspection 40 V 78 A 7.2 mW @ 4.5 V
nvmfs5c410nl.pdf
NVMFS5C410NL Power MOSFET 40 V, 0.9 mW, 315 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 0.9
nvmfs5c673n.pdf
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nvmfs5c628n.pdf
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nvmfs5c638nl.pdf
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nvmfs5833n.pdf
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nvmfs5c468n.pdf
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nvmfs5c404n.pdf
NVMFS5C404N Power MOSFET 40 V, 0.7 mW, 378 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 0.7
nvmfs5c682nl.pdf
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nvmfs5c673nl.pdf
MOSFET Power, Single N-Channel 60 V, 9.2 mW, 50 A NVMFS5C673NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical 9.2 mW @ 10 V 60 V 50 A Inspection 13 mW @ 4.5 V
nvmfs5a160plz.pdf
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nvmfs5c612nl.pdf
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nvmfs5c426nl.pdf
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nvmfs5a140plz.pdf
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nvmfs5c612n.pdf
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nvmfs5c430n.pdf
NVMFS5C430N MOSFET Power, Single N-Channel 40 V, 1.7 mW, 185 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NWF - Wettable Flank Option for Enhanced Optical 40 V 1.7 mW @ 10 V 185 A Inspection AEC-Q101 Qualif
nvmfs5c406nl.pdf
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nvmfs5c423nl.pdf
NVMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C423NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.0 mW
nvmfs5c468nl.pdf
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nvmfs5c466n.pdf
NVMFS5C466N MOSFET Power, Single N-Channel 40 V, 8.1 mW, 49 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C466NWF - Wettable Flank Option for Enhanced Optical 40 V 8.1 mW @ 10 V 49 A Inspection AEC-Q101 Qualifie
nvmfs5c442n.pdf
NVMFS5C442N Power MOSFET 40 V, 2.3 mW, 140 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C442NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 2.3
nvmfs5c670nl.pdf
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nvmfs5c442nl.pdf
NVMFS5C442NL Power MOSFET 40 V, 2.8 mW, 127 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com NVMFS5C442NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.8
nvmfs5c406n.pdf
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nvmfs5c426n.pdf
NVMFS5C426N Power MOSFET 40 V, 1.3 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 1.3
nvmfs5c646nl.pdf
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nvmfs5834nl.pdf
NVMFS5834NL Product Preview Power MOSFET 40 V, 9.3 mW, 76 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
nvmfs5c450n.pdf
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nvmfs5113pl.pdf
NVMFS5113PL Power MOSFET -60 V, 14 mW, -64 A, Single P-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com NVMFS5113PLWF - Wettable Flanks Product NVM Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) ID Unique Site and Control Change Requirements; AEC-Q101 14 mW @ -
nvmfs5826nl.pdf
NVMFS5826NL Power MOSFET 60 V, 24 mW, 26 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices and RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 24 mW @ 10 V 60 V MAXIMUM RATINGS
ntmfs5844nlt1g nvmfs5844nl.pdf
NTMFS5844NL, NVMFS5844NL Power MOSFET 60 V, 61 A, 12 mW, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX ID MAX Unique Site and Control Change Requirements;
nvmfs5c456n.pdf
MOSFET Power, Single N-Channel 40 V, 4.5 mW, 80 A NVMFS5C456N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NWF - Wettable Flank Option for Enhanced Optical 40 V 4.5 mW @ 10 V 80 A Inspection AEC-Q101 Qualifie
nvmfs5c410n.pdf
MOSFET - Power, Single N-Channel 40 V, 0.92 mW, 300 A NVMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 0.92 mW @ 10 V 300 A AEC-Q101 Qualif
Другие IGBT... NVMFS5C670N, NVMFS5C673N, NVMFS5C673NL, NVMFS5C677NL, NVMFS5C680NL, NVMFS5C682NL, NVMFS5H600NL, NVMFS5H663NL, IRFP450, NVMFS6B14NL, NVMFS6B75NL, NVMFS6D1N08H, NVMFS6H800NL, NVMFS6H801N, NVMFS6H801NL, NVMFS6H818N, NVMFS6H818NL
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